semiconductor lite-on notice: (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; pos itive gate voltage shall not be applied concurrent with negative potential on the anode. b locking voltages shall not be tested with a constan t current source such that the volta ge ratings of the devices are exceeded maximum ratings (t j = 25 unless otherwise noticed) features sensitive gate allows triggering by microcontroller s and other logic circuits blocking voltage to 600 volts onC state current rating of 0.8 amperes rms at 80 high surge current capability 10 amperes minimum and maximum values of igt, vgt and ih speci fied for ease of design immunity to dv/dt 20 v/us minimum at tj=110 glass-passivated surface for reliability and unifor mity pb-free package sensitive gate sillicon controlled rectifiers reverse blocking thyristors scrs 0.8 amperes rms 600 volts 2 2 to-92 (to-226aa) 1 cathode 2 gate 3 anode pin assignment rating symbol value unit peak repetitive offC state voltage ( t j = -40 to 110 , sine wave, 50 to 60 hz; gate open) v drm , v rrm 600 volts on-state rms current ( t c = 80 ) 180 conduction angles i t(rms) 0.8 amp peak non-repetitive surge current (1/2 cycle, sine wave, 60 hz, t j = 25 ) i tsm 10 amps circuit fusing consideration (t = 8.3 ms) i t 0.415 a s forward peak gate power (t a = 25 , pulse width 1.0 us) Q p gm 0.1 watt forward average gate power ( t a = 25 , t = 8.3 ms) p g(av) 0.01 watt forward peak gate current ( t a = 25 , pulse width 1.0 us Q ) i gm 1.0 amp reverse peak gate voltage ( t a = 25 , pulse width 1.0 ms) Q v grm 5 volts operating junction temperature range @ rate v rrm and v drm t j -40 to +110 storage temperature range tstg -40 to +150 2 2 notice: (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; pos itive gate voltage shall not be applied concurrent with negative potential on the anode. b locking voltages shall not be tested with a constan t current source such that the volta ge ratings of the devices are exceeded rev.3, oct-2010, ktxd18 S08U25-600A s08u50-600a s08m02-600a s08-a series all dimensions in millimeter to-92 dim. min. max. a c d e f g b 4.45 4.70 5.33 4.32 3.18 4.19 1.39 1.15 2.42 2.66 12.7 ------ 2.04 2.66 3.43 i -----
characteristic symbol value unit thermal resistance - junction to case - junction to ambi ent r thjc r thja 75 150 /w maximum lead temperature for soldering purposes 1/1 6" from case for 10 seconds t l 260 characteristics symbol min typ max unit peak reptitive forward or reverse blocking current t j =25 (vd=rated vdrm and vrrm; rgk =1k ohms) t j =110 i drm i rrm ---- ---- ---- ---- 10 100 ua critical rate of rise of off-state voltage (v d =rated v drm ,exponential waveform, pgk=1k ohms, t j =110 dv/dt 20 ---- ---- v/us thermal characteristics electrical characteristics (t j =25 unless otherwise noted) off characteristics on characteristics dynamic characteristics s08u25 ---- ---- 25 s08u50 ---- ---- 50 s08m02 ---- ---- 200 t j =25 ---- ---- 5 t j =-40 ---- ---- 10 t j =25 ---- ---- 0.8 t j =-40 ---- ---- 1.2 t j =25 ---- ---- 10 t j =-40 ---- ---- 15 peak forward on-state voltage (itm= 1.6a peak, pulse width Q 1.0ms, duty cycle Q 1%) ---- 1.7 volts v tm ---- latch current(vd= 7.0 vdc, rl 100 ohms) i l i gt holding current(vd= 7.0 vdc, intitiating current = 20ma) i h gate trigger voltage(vd= 7.0 vdc,rl=100 ohms) (1) v gt gate trigger current(vd= 7.0 vdc,rl=100 ohms) (1) ua ma volts ma (1) r gk current is not included in measurement rating and characteristic curves s08-a series
0.1 1 10 0 1 2 3 4 5 6 rating and characteristic curves s08-a series vt, instantane on-state voltage(volts) figure 1. on-state characteristics it, instantaneous on-state current (amp)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.2 0.4 0.6 0.8 -40 -20 0 20 40 60 80 100 figure 2. igt(tj) / igt(25 ) versus tj tj junction temperature( ) 0 0.5 1 1.5 2 2.5 igt(tj) / igt(25 ) -40 -20 0 20 40 60 80 100 figure 3. typical igt versus tj tj junction temperature( ) 0.4 0.5 0.6 0.7 0.8 vgt, gate trigger voltage -40 -20 0 20 40 60 80 100 figure 4. typical igt versus tj tj junction temperature( ) 0 0.2 0.4 0.6 0.8 1 ih, holding current -40 -20 0 20 40 60 80 100 figure 5. typical igt versus tj tj junction temperature( ) 0 0.2 0.4 0.6 0.8 1 il, latching current tc, case temperature( ) figure 6. on-state current derating curve p(av) ,average power dissipation (watts) figure 7. power dissipation versus it it(av), average on-state current (amp) tj=25 tj=125 it(rms) ,rms on-state current (amp) 0.0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 120 rating and characteristic curves s08-a series
legal disclaimer notice s08-a series lsc reserves the right to make changes to this docu ment and its products and specifications at any time without notice. custome rs should obtain and confirm the latest product information and specifications b efore final design, purchase or use. lsc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does l sc assume any liability for application assistance or customer product design. lsc does not warrant or accept any liability with products which are purcha sed or used for any unintended or unauthorized application. no license is granted by implication or otherwise u nder any intellectual property rights of lsc. lsc products are not authorized for use as critical components in life support devices or systems without express written approval of lsc. important notice and disclaimer
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